Transient sputtering of an amorphous Si surface under low energy O2+ ion bombardment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2205355
Reference17 articles.
1. Ultra shallow doping profiling with SIMS
2. The surface transient in Si for SIMS with oblique low-energy O2+ beams
3. Subnanometre depth resolution in sputter depth profiling of Si layers using grazing-incident low-energy O2+ and Ar+ ions
4. Surface transient behavior of the 30Si+ yield with angle of incidence and energy of an O+2 primary beam
5. Local SiO2 formation in silicon bombarded with oxygen above the critical angle for beam-induced oxidation: new evidence from sputtering yield ratios and correlation with data obtained by other techniques
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