Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide‐Bandgap Electronics-Reference-Cited by-同舟云学术

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Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide‐Bandgap Electronics

Published:2021-11-11 Issue: Volume: Page:2100652
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Zhang Yi‐Yu¹,An Shu¹,Zheng Yixiong²,Lai Junyu²,Seo Jung‐Hun²,Lee Kwang Hong¹,Kim Munho¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

2. Department of Materials Design and Innovation University at Buffalo The State University of New York, Buffalo Buffalo NY 14260 USA

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100652

Reference36 articles.

1. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond

2. Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

3. Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

4. III-nitride semiconductor lasers grown on Si

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1. Chemical Mechanical Polishing of Single-Crystalline Diamond Epitaxial Layers for Electronics Applications;IEEE Transactions on Semiconductor Manufacturing;2024-05

2. Structural, optical, and electrical characterization and performance comparison of AlGaN/GaN HEMT structures with different buffer layers;Vacuum;2024-01

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4. Temperature Dependence of Low‐Frequency Noise Characteristics of NiO_x/β‐Ga₂O₃ p–n Heterojunction Diodes;Advanced Electronic Materials;2023-11-29

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