Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3655470
Reference17 articles.
1. Empirical tight‐binding calculation of the branch‐point energy of the continuum of interface‐induced gap states
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4. Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states
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