Valence-band offsets and Schottky barrier heights of layered semiconductors explained by interface-induced gap states
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121220
Reference27 articles.
1. Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxy
2. Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials
3. Heteroepitaxy of Layered Semiconductor GaSe on a GaAs(111)B Surface
4. Theory of Surface States
5. Zur Halbleitertheorie der Sperrschicht- und Spitzengleichrichter
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