Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110400
Reference8 articles.
1. MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O
2. Improved hot-carrier immunity in submicrometer MOSFETs with reoxidized nitrided oxides prepared by rapid thermal processing
3. Compositional study of ultrathin rapidly reoxidized nitrided oxides
4. Composition and growth kinetics of ultrathin SiO2films formed by oxidizing Si substrates in N2O
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