Pre-metallization processing effects on Schottky contacts to AlGaN∕GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1883719
Reference41 articles.
1. Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag
2. Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN
3. Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment
4. Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts
5. Pt Schottky contacts ton-GaN formed by electrodeposition and physical vapor deposition
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2. Temperature dependence of the I-V characteristics of Ni/Au Schottky contacts to AlGaN/GaN heterostructures grown on Si substrates;physica status solidi (a);2017-03-03
3. Performance enhancement of gate-annealed AlGaN/GaN HEMTs;Journal of the Korean Physical Society;2017-03
4. Temperature dependent forward current-voltage characteristics of Ni/Au Schottky contacts on AlGaN/GaN heterostructures described by a two diodes model;Journal of Applied Physics;2017-01-28
5. Sulphide passivation of GaN based Schottky diodes;Current Applied Physics;2014-03
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