Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy-Reference-Cited by-同舟云学术

Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy

Published:2018-11 Issue:11 Volume:8 Page:115225
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Sumiya Masatomo¹^ORCID,Fukuda Kiyotaka¹²,Iwai Hideo³,Yamaguchi Tomohiro²,Onuma Takeyoshi²,Honda Tohru²

Affiliation:

1. Wide-Gap Semiconductor Group, National Institute for Materials Science, Namiki, Tsukuba 305-0044, Japan

2. Department of Applied Physics, School of Advanced Engineering, Graduate School of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan

3. Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Sengen, Tsukuba 305-0047, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5052493

Reference23 articles.

1. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

2. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

3. Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers

4. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

5. High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator

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1. Refining Photothermal Deflection Spectroscopy: Incorporating Reflectance for Enhanced Accuracy in Light‐Absorption Measurements;physica status solidi (a);2023-11-22

2. Characterization of wide-gap semiconductors by photothermal deflection spectroscopy;Japanese Journal of Applied Physics;2023-08-09

3. Quantitative evaluation of low-concentration OH impurities in quartz glass by infrared photothermal deflection spectroscopy;Japanese Journal of Applied Physics;2023-07-01

4. Sample characterization by transverse photothermal beam deflection spectrometry in skimming configuration;Journal of Applied Physics;2023-06-01

5. Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing;Journal of Physics D: Applied Physics;2023-04-11