Microtwin reduction in 3C–SiC heteroepitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3514559
Reference14 articles.
1. Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates
2. 3C-SiC Single-Crystal Films Grown on 6-Inch Si Substrates
3. Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films
4. Hetero- and homo-epitaxial growth of 3C-SiC for MOS-FETs
5. Evidence of electrical activity of extended defects in 3C–SiC grown on Si
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2. New Approaches and Understandings in the Growth of Cubic Silicon Carbide;Materials;2021-09-16
3. 3C-SiC Film Growth on Si Substrates;ECS Transactions;2019-12-16
4. Heteroepitaxial growth of thick 3C‐SiC (110) films by Laser CVD;Journal of the American Ceramic Society;2019-02-11
5. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05
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