Shubnikov–de Haas effect and persistent photoconductivity in In0.52Al0.48As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371627
Reference18 articles.
1. 1.2 K Shubnikov–de Haas measurements and self‐consistent calculation of silicon spreading in δ‐ and slab‐doped In0.53Ga0.47As grown by molecular beam epitaxy
2. Surface segregation of Si in δ-doped In0.53Ga0.47As grown by molecular beam epitaxy
3. Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575° C by molecular beam epitaxy
4. Pulsed and high temperature superconducting magnet technology in Oxford
5. Si spreading in lattice-matchedIn0.53Ga0.47Asgrown by molecular-beam epitaxy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Depletion of parallel conducting layers in high mobility In[sub 0.53]Ga[sub 0.47]As∕In[sub 0.52]Al[sub 0.48]As modulation doped field effect transistors;AIP Conference Proceedings;2013
2. Spin-orbit coupling in double-sided doped InAs quantum well structures;Applied Physics Letters;2010-07-05
3. Fermi energy pinning at the surface of high mobility In0.53Ga0.47As∕In0.52Al0.48As modulation doped field effect transistor structures;Applied Physics Letters;2007-03-26
4. Al-As-In (Aluminium-Arsenic-Indium);Non-Ferrous Metal Systems. Part 1;2006
5. Molecular-beam epitaxy growth of InGaAs–InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
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