Surface segregation of Si in δ-doped In0.53Ga0.47As grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Surface segregation of Si in δ-doped In0.53Ga0.47As grown by molecular beam epitaxy

Published:1997-05 Issue: Volume:175-176 Page:229-233
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Vögele B.,Stanley C.R.,Skuras E.,Long A.R.,Johnson E.A.

Funder

Engineering and Physical Sciences Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Subband physics for a “realistic” δ-doping layer

2. Theory and experiment of capacitance-voltage profiling on semiconductors with quantum-confinement

3. 1.2 K Shubnikov–de Haas measurements and self‐consistent calculation of silicon spreading in δ‐ and slab‐doped In0.53Ga0.47As grown by molecular beam epitaxy

4. Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum Phenomena at Compound Semiconductor Surfaces;Hyomen Kagaku;2006

2. Shubnikov–de Haas effect and persistent photoconductivity in In0.52Al0.48As;Journal of Applied Physics;1999-12

3. Si spreading in lattice-matchedIn0.53Ga0.47Asgrown by molecular-beam epitaxy;Physical Review B;1999-04-15

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