Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104613
Reference12 articles.
1. Peak electron mobilities between 2.75 and 3.32×105cm2 V−1 s−1in GaAs grown by molecular beam epitaxy with As2
2. Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy
3. Shallow donors in very pure GaAs grown by gas source molecular beam epitaxy
4. High‐purity GaAs layers grown by low‐pressure metalorganic chemical vapor deposition
5. Dimer arsenic source using a high efficiency catalytic cracking oven for molecular beam epitaxy
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