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3. Molecular-beam epitaxy growth of InGaAs–InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential
4. Photoreflectance studies of surface state density of InAlAs
5. 1.2 K Shubnikov–de Haas measurements and self‐consistent calculation of silicon spreading in δ‐ and slab‐doped In0.53Ga0.47As grown by molecular beam epitaxy