Layer thickness calculations for silicon‐on‐insulator structures formed by oxygen implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104227
Reference12 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. Computer simulation of high fluence oxygen profiles in silicon
3. Nonplanar and noncontinuous buried layers of SiO2 in silicon formed by ion beam synthesis
4. The evolution of the Si/SiO2 interface in buried oxide layers formed by high dose oxygen implantation into silicon
5. High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
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1. Detailed analysis of the silicon surface under low-energy oxygen bombardment at atomic resolution;Physical Review B;2012-08-21
2. Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy;Journal of The Electrochemical Society;2001
3. Phase stepping microscopy for layer thickness measurement in silicon-on-insulator structures;Thin Solid Films;1997-12
4. Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon;Journal of Applied Physics;1995-01-15
5. SIMOX Thin Films. Structural and Electrical Characterisation using FTIR Spectroscopy;Application of Particle and Laser Beams in Materials Technology;1995
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