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The evolution of the Si/SiO2 interface in buried oxide layers formed by high dose oxygen implantation into silicon

  • Published:1987-01 Issue: Volume:19-20 Page:290-293
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Chater R.J.,Kilner J.A.,Hemment P.L.F.,Reeson K.J.,Davis J.R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural defects in SIMOX;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-05

2. Structural defects in SIMOX;Ion Beam Processing of Materials and Deposition Processes of Protective Coatings;1996

3. Silicon on Insulator Obtained by High Dose Oxygen Implantation, Microstructure, and Formation Mechanism;Journal of The Electrochemical Society;1995-04-01

4. Microstructure of SIMOX buried oxide, mechanisms of defect formation and related reliability issues;Microelectronic Engineering;1993-08

5. The Effects of Dose and Target Temperature on Low Energy SIMOX Layers;Journal of The Electrochemical Society;1993-06-01
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