Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe-Reference-Cited by-同舟云学术

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Published:2016-04-21 Issue:15 Volume:119 Page:155301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ozcan Ahmet S.¹,Lavoie Christian²,Alptekin Emre³,Jordan-Sweet Jean²,Zhu Frank³,Leith Allen⁴^ORCID,Pfeifer Brian D.⁴,LaRose J. D.⁴,Russell N. M.⁴

Affiliation:

1. IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA

2. IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA

3. IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, USA

4. TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821, USA

Funder

Brookhaven National Laboratory (BNL)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4947054

Reference15 articles.

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3. Nickel-based contact metallization for SiGe MOSFETs: progress and challenges

4. S. V. Deshpande , A. Ozcan , D. Wall , E. Kim , and O. Gluschenkov , in International Workshop on Junction Technology (IWJT) ( IEEE, 2010), pp. 1–3.

5. Towards implementation of a nickel silicide process for CMOS technologies

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1. Energy Distributions of Secondary Charged Particles Sputtered by Gas Cluster Ions;Technical Physics Letters;2021-12-14

2. In‐Situ Observation of the Formation of NiSi/Ni 2 Si Heterojunction in SiGe Nanowire with Al 2 O 3 Diffusion Barrier Layer;Advanced Materials Interfaces;2021-06-25

3. Impact of laser anneal on NiPt silicide texture and chemical composition;Journal of Applied Physics;2017-06-14