Morphological instability of NiSi1−uGeu on single-crystal and polycrystalline Si1−xGex
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1766088
Reference28 articles.
1. NiSi salicide technology for scaled CMOS
2. Work function of boron-doped polycrystalline Si/sub x/Ge/sub 1-x/ films
3. Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1−xGex
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