Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNx-Reference-Cited by-同舟云学术

Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNx

Published:2004-07 Issue:1 Volume:96 Page:777-783
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jin Z.,Prost W.,Neumann S.,Tegude F.-J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1757656

Reference11 articles.

1. High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy

2. Over 300 GHz f/sub T/ and f/sub max/ InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base

3. Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment

4. Passivation of InP-based HBTs

5. Effects of (NH4)2S passivation on the performance of graded-base InGaAs/InP HBTs

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3. Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide;Applied Physics Letters;2012-01-02

4. Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation;physica status solidi (c);2011-11-02

5. Surface Passivation of InGaAs/InP HBTs Using Atomic Layer Deposited Al2O3;ECS Transactions;2011-04-25