Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1−xSbx type-II superlattices
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Funder
Basic Energy Sciences (BES)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4956351
Reference20 articles.
1. Intensity- and Temperature-Dependent Carrier Recombination inInAs/InAs1−xSbxType-II Superlattices
2. Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes
3. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors
4. Analysis of III–V Superlattice nBn Device Characteristics
5. Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Contactless measurement of minority carrier lifetime and background carrier concentration in unintentionally doped GaAsSb for short-wave infrared detection;AIP Advances;2023-08-01
2. Interactions between Sb and As on InAs(0 0 1) surfaces;Journal of Crystal Growth;2018-10
3. The atomistic mechanism for Sb segregation and As displacement of Sb in InSb(001) surfaces;Surface Science;2018-01
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