Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors-Reference-Cited by-同舟云学术

Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

Published:2015-11-02 Issue:18 Volume:107 Page:183504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Olson B. V.¹^ORCID,Kim J. K.¹,Kadlec E. A.¹,Klem J. F.¹,Hawkins S. D.¹,Leonhardt D.¹,Coon W. T.¹,Fortune T. R.¹,Cavaliere M. A.¹,Tauke-Pedretti A.¹,Shaner E. A.¹

Affiliation:

1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

Department of Energy Office of Basic Energy Science

Intelligence Community Postdoctoral Research Fellowship Program

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935159

Reference18 articles.

1. New concepts in infrared photodetector designs

2. nBn detector, an infrared detector with reduced dark current and higher operating temperature

3. Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe

4. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

5. Band gap of InAs1−xSbxwith native lattice constant

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