Millisecond non-melt laser annealing of phosphorus implanted germanium: Influence of nitrogen co-doping
Author:
Affiliation:
1. Department of Physics, National Technical University of Athens, Zografou, Athens 15773, Greece
2. Applied Materials—Varian, Gloucester, Massachusetts 01930, USA
Funder
Greek Ministry of Education and Religious Affairs
European Social Fund (ESF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4932600
Reference29 articles.
1. Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium
2. Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
3. Diffusion ofn-type dopants in germanium
4. Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium
5. Germanium substrate loss during thermal processing
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