Stochastic modeling of progressive breakdown in ultrathin SiO2 films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1634372
Reference10 articles.
1. Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
2. Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics
3. Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?
4. Degradation and hard breakdown transient of thin gate oxides in metal–SiO2–Si capacitors: Dependence on oxide thickness
5. Light emission microscopy for thin oxide reliability analysis
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1. Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+Si bottom electrodes;Microelectronics Reliability;2016-08
2. Reliability Modeling for Ultrathin Gate Oxides Subject to Logistic Degradation Processes with Random Onset Time;Quality and Reliability Engineering International;2012-06-18
3. Simulation of the time-dependent breakdown characteristics of heavy-ion irradiated gate oxides using a mean-reverting Poisson-Gaussian process;IEEE Transactions on Nuclear Science;2005-10
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