Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+Si bottom electrodes-Reference-Cited by-同舟云学术

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+Si bottom electrodes

Published:2016-08 Issue: Volume:63 Page:42-45
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Hadi M.S.,Sugii N.,Wakabayashi H.,Tsutsui K.,Iwai H.,Kakushima K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Resistive switching in transition metal oxides;Sawa;Mater. Today,2008

2. Metal-oxide RRAM;Wong;Proc. IEEE,2012

3. AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory;Yu;Appl. Phys. Lett.,2011

4. Effect of top electrode material on resistive switching properties of ZrO2 film memory devices;Lin;IEEE Electron Device Lett.,2007

5. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices;Kim;J. Appl. Phys.,2008

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Barium titanate write-once read-many times resistive memory with an ultra-high on/off current ratio of 108;Journal of Alloys and Compounds;2024-06

2. Barium Titanate Write-Once Read-Many Times Resistive Memory with an Ultra-High On/Off Current Ratio of 10^8;2023

3. Fuzzy logic based Gourami fish pond water quality management system;THE 2ND NATIONAL CONFERENCE ON MATHEMATICS EDUCATION (NACOME) 2021: Mathematical Proof as a Tool for Learning Mathematics;2023

4. Electrical appliance remote monitoring system using IoT Lora technology;THE 2ND NATIONAL CONFERENCE ON MATHEMATICS EDUCATION (NACOME) 2021: Mathematical Proof as a Tool for Learning Mathematics;2023

5. Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement;Japanese Journal of Applied Physics;2022-02-01