Electron traps in GaAs0.6P0.4p+ndiodes fabricated by Zn implantation and rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339655
Reference17 articles.
1. Ga(AsP) light‐emitting diode formed by ion implantation
2. Electrical characteristics of GaAs0.6P0.4p+n diodes fabricated by Zn implantation and rapid thermal annealing
3. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
4. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
5. DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. New electron and hole traps in GaAsP alloy;International Journal of Electronics;1997-07
2. Study of Medium-Deep Traps in Undoped GaAs Grown by Arsenic-Pressure Controlled Cz Method;MRS Proceedings;1992
3. Deep donor levels in Te-Doped GaAsP alloy;Chinese Physics Letters;1990-03
4. Rapid thermal diffusion of Zn inton‐type GaAs0.6P0.4from Zn‐doped oxide films;Journal of Applied Physics;1989-10-15
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