Deep donor levels in Te-Doped GaAsP alloy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/7/3/009/pdf
Reference12 articles.
1. Trapping characteristics of Te‐related centers in GaAs1−xPx
2. Electron traps in GaAs0.6P0.4p+ndiodes fabricated by Zn implantation and rapid thermal annealing
3. Deep‐level analysis in Te‐doped GaAs0.62P0.38
4. A multistate model for DX centers in AlxGa1-xAs alloy
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