Author:
Xiao Xi-Feng ,Kang Jun-Yong ,
Abstract
ＶｏｌｔａｇｅｔｒａｎｓｉｅｎｔｓｄｕｅｔｏｔｈｅｔｈｅｒｍａｌｅｌｅｃｔｒｏｎｃａｐｔｕｒｅａｎｄｅｍｉｓｓｉｏｎｏｆＤＸｃｅｎｔｅｒｓｉｎｎ ｔｙｐｅＳｎ ｄｏｐｅｄＡｌ0 . 2 6 Ｇａ0 .74Ａｓｗｅｒｅ
ｍｅａｓｕｒｅｄｂｙｔｈｅｃｏｎｓｔａｎｔｃａｐａｃｉｔａｎｃｅｔｅｃｈｎｉｑｕｅａｎｄｔｒａｎｓｆｏｒｍｅｄｂｙＬａｐｌａｃｅｄｅｆｅｃｔｓｐｅｃｔｒｏｓｃｏｐｙ (ＬＤＳ) .Ｂｙａｎａｌｙｚｉｎｇｔｈｅｖａｒｉａｔｉｏｎｓｏｆｄｉｓｃｒｅｔｅｅｍｉｓｓｉｏｎｒａｔｅｓｗｉｔｈｄｉｆｆｅｒｅｎｔｃａｐｔｕｒｅｐｅｒｉｏｄｓ,ｃｏｒｒｅｓｐｏｎｄｉｎｇｒｅｌａｔｉｏｎｓｂｅｔｗｅｅｎｄｉｓｃｒｅｔｅｃａｐｔｕｒｅａｎｄｅｍｉｓｓｉｏｎｒａｔｅｓａｎｄｃａｐｔｕｒｅｃｏｅｆｆｉｃｉｅｎｔｓｗｅｒｅｄｅｔｅｒｍｉｎｅｄ .ＴｈｅｆｉｎｅｓｔｒｕｃｔｕｒｅｓｏｆｅｌｅｃｔｒｏｎｃａｐｔｕｒｅｂａｒｒｉｅｒｓｏｆｔｈｅＳｎ ｒｅｌａｔｅｄＤＸｃｅｎｔｅｒｓｗｅｒｅｏｂｔａｉｎｅｄｂｙｌｉｎｅａｒｆｉｔｔｉｎｇｔｈｅｄａｔａｏｆｔｅｍｐｅｒａｔｕｒｅ ｄｅｐｅｎｄｅｎｃｅｓｏｆｔｈｅｃａｐｔｕｒｅｃｏｅｆｆｉｃｉｅｎｔｓ.ＴｈｅｒｅｓｕｌｔｓｃａｌｃｕａｔｅｄｂｙｕｓｉｎｇｔｈｅｆｉｒｓｔｐｒｉｎｃｉｐｌｅｐｓｅｕｄｏｐｏｔｅｎｔｉａｌｍｅｔｈｏｄｓｈｏｗｔｈａｔｔｈｅｆｉｎｅｓｔｒｕｃｔｕｒｅｓｏｆｔｈｅｃａｐｔｕｒｅｂａｒｒｉｅｒｓｍａｉｎｌｙｃｏｎｔｒｉｂｕｔｅｔｏＡｌ ＧａａｔｄｉｆｆｅｒｅｎｔｌｏｃａｌｃｏｎｆｉｇｕｒａｔｉｏｎｓｎｅａｒＳｎａｔｏｍｓｄｕｅｔｏｔｈｅａｌｌｏｙｒａｎｄｏｍｅｆｆｅｃｔ.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
4 articles.
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