Highly deep levels in solid C70/p-GaAs structures
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Published:2004
Issue:10
Volume:53
Page:3498
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Ran Guang-Zhao ,Chen Yuan ,Chen Kai-Ｍao ,Zhang Xiao-Lan ,Liu Hong-Fei ,
Abstract
An acoustoelectric current is induced by a surface acoustic wave (SAW) launched along the quasionedimensional electron channel defined in a GaAs/Al x Ga1-x As heterostructure by split gates. Using the WKB approxima tion, the acoust oelectric current is calculated when only one electron is captured in the quantu m well. We discussed the effect on acoustoeletric current caused by SAW power, S AW frequency, gate voltage and sourcedrain bias.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy