Rapid thermal diffusion of Zn inton‐type GaAs0.6P0.4from Zn‐doped oxide films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344064
Reference12 articles.
1. Electrical characteristics of GaAs0.6P0.4p+n diodes fabricated by Zn implantation and rapid thermal annealing
2. Electron traps in GaAs0.6P0.4p+ndiodes fabricated by Zn implantation and rapid thermal annealing
3. Infrared rapid thermal annealing for GaAs device fabrication
4. Characteristics of electron traps in Si‐implanted and rapidly thermal‐annealed GaAs
5. Transient diffusion doping in Si
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1. Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy;Materials Science and Engineering: B;2001-03
2. Characteristics of Zn diffusion in planar and patterned InP substrate using Zn3P2 film and rapid thermal annealing process;Surface and Coatings Technology;2000-09
3. Thermal degradation of ZnO/InP interfaces: Heteroepitaxial growth of precipitated indium on InP{111} planes;Journal of Applied Physics;1996-12
4. Open tube zinc diffusion into GaAs0.8P0.2using AlN and SiNxcap films;Journal of Applied Physics;1996-03-15
5. Epitaxial character of in growth at annealed ZnO/InP(110) interfaces;Physica Status Solidi (a);1996-02-16
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