Gold clusters precipitation at the interface between Ni(Au) silicides and (111) silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360258
Reference14 articles.
1. Dilute NiPt alloy interactions with Si
2. Influence of Au as an impurity in Ni‐silicide growth
3. Lattice and grain boundary self‐diffusion in Ni2Si: Comparison with thin‐film formation
4. Copper Precipitation at the Silicon-Silicon-Dioxide Interface: Role of Oxygen
5. Algorithms for the rapid simulation of Rutherford backscattering spectra
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1. Low-temperature formation of CoSi2 in the presence of Au;Journal of Applied Physics;2004-05-15
2. Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-02
3. Stress evolution of Ni/Pd/Si reaction system under isochronal annealing;Thin Solid Films;2000-04
4. Effect of Co, Pt, and Au additions on the stability and epitaxy of NiSi2 films on (111)Si;Journal of Applied Physics;1998-09
5. Influence of the addition of Co and Ni on the formation of epitaxial semiconducting β-FeSi2: Comparison of different evaporation methods;Journal of Applied Physics;1998-04-15
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