Silicon-on-insulator control impact-ionization-avalanche transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2177367
Reference10 articles.
1. The silicon insulated-gate field-effect transistor
2. Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations
3. Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations
4. Impact ionization MOS (I-MOS)-Part II: experimental results
5. Physical Principles of Avalanche Transistor Pulse Circuits
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical model of the thin-film silicon-on-insulator tunneling field effect transistor;Journal of Applied Physics;2011-12
2. Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model;Advanced Materials Research;2011-07
3. Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF state;Solid-State Electronics;2008-07
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