Affiliation:
1. Institute of Semiconductor Physics
2. IMEP
Abstract
Theoretical model of thin film SOI MISFET based on the gate control of impact ionization avalanche in the drain induced p-n+ junction is developed. Such operation principle opens a way of the creation of transistors with high transconductance and operation frequency, and switching between the ON and OFF states by low gate voltage variation.
Publisher
Trans Tech Publications, Ltd.
Reference11 articles.
1. V. N. Dobrovolsky and S. Cristoloveanu: Microel. Eng. Vol. 72 (2004), p.379.
2. V. Dobrovolsky, S. Pavljuk, V. Rossokhaty and S. Cristoloveanu: Appl. Phys. Let. Vol. 88 (2006), p.073502.
3. V. Dobrovolsky, F. Sizov, S. Cristoloveanu and S. Pavljuk: SSE Vol. 52 (2008), p.1047.
4. R. J. McIntyre: IEEE Trans. Electron Devices Vol. ED-13 (1966), p.164.
5. F. Capasso, in: Lightwave Communications Technology (Academic Press, NY 1985).