Anomalous temperature characteristics of single wide quantum well InGaN laser diode-Reference-Cited by-同舟云学术

Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Published:2006-02-13 Issue:7 Volume:88 Page:071121
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Świetlik T.,Franssen G.,Wiśniewski P.,Krukowski S.,Łepkowski S. P.,Marona L.,Leszczyński M.,Prystawko P.,Grzegory I.,Suski T.,Porowski S.,Perlin P.,Czernecki R.,Bering-Staniszewska A.,Eliseev P. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2177368

Reference13 articles.

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3. High‐power GaN‐based semiconductor lasers

4. Wiley Series in Microwave and Optical Engineering;Coldren L. A.,1995

5. Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

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