Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN-Reference-Cited by-同舟云学术

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Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN

Published:2005-07-25 Issue:4 Volume:87 Page:041109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Franssen G.,Suski T.,Perlin P.,Bohdan R.,Bercha A.,Trzeciakowski W.,Makarowa I.,Prystawko P.,Leszczyński M.,Grzegory I.,Porowski S.,Kokenyesi S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2000331

Reference12 articles.

1. The Blue Laser Diode

2. Effects of macroscopic polarization in III-V nitride multiple quantum wells

3. Luminescence spectra from InGaN multiquantum wells heavily doped with Si

4. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells

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