E centers in ternary Si1−x−yGexSny random alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3224894
Reference36 articles.
1. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
2. Versatile buffer layer architectures based on Ge1−xSnx alloys
3. Tunable Optical Gap at a Fixed Lattice Constant in Group-IV Semiconductor Alloys
4. Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions
5. Fundamental Studies of P(GeH3)3, As(GeH3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors
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