Fundamental Studies of P(GeH3)3, As(GeH3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors
Author:
Affiliation:
1. Department of Chemistry and Biochemistry and Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm061696j
Reference38 articles.
1. Preparation and properties of trigermyl-arsine and -stibine
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3. Determination of the molecular structure of tris(trimethylsilyl)phosphine in the gas phase by electron diffraction, supported by molecular mechanics calculations
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