Thermal-annealing dependence of C-related atomic configuration in Si1−x−yGexCy crystals grown by ultra-high-vacuum chemical-vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1367294
Reference12 articles.
1. Advanced Column-IV Epitaxial Materials for Silicon-Based Optoelectronics
2. Solubility of Carbon in Silicon and Germanium
3. Growth and properties of strained Si1-x-yGexCylayers
4. Ternary SiGeC alloys: growth and properties of a new semiconducting material
5. Si1-x-yGexCy growth and properties of the ternary system
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of thermal effect on electrical properties of Si0.887Ge0.113 and Si0.887−yGe0.113Cy films;Journal of Applied Physics;2004-04-15
2. Carbon inSixGe1−x:Anab initioinvestigation;Physical Review B;2004-03-18
3. Experimental study of Si substitution by Ge in Ge-alloyed SiC epitaxial growth on6H−SiC(0001);Physical Review B;2003-03-28
4. Surface roughening of tensilely strained Si1−x−yGexCy films grown by ultrahigh vacuum chemical vapor deposition;Applied Physics Letters;2002-10-07
5. Initial Stage of Carbon Incorporation into Si(001) and One-Dimensional Ordering of Embedded Carbon;Physical Review Letters;2002-08-20
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