InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface-Reference-Cited by-同舟云学术

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InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

Published:2013-08-21 Issue:7 Volume:114 Page:074313
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Teubert J.,Koslowski S.,Lippert S.,Schäfer M.,Wallys J.,Dimitrakopulos G.,Kehagias Th.,Komninou Ph.,Das A.,Monroy E.,Eickhoff M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4818624

Reference34 articles.

1. Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

2. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

3. AlxGa1–xN—A New Material System for Biosensors

4. Photocatalytic activity of gallium nitride for producing hydrogen from water under light irradiation

5. Photocatalysis Using GaN Nanowires

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers;ACS Applied Materials & Interfaces;2021-01-13

2. InGaN/GaN nanowires as a new platform for photoelectrochemical sensors – detection of NADH;Biosensors and Bioelectronics;2017-08

3. High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models;Advanced Functional Materials;2014-05-13

4. Group III-Nitride Chemical Nanosensors with Optical Readout;Springer Series on Chemical Sensors and Biosensors;2014

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