External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers-Reference-Cited by-同舟云学术

External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers

Published:2021-01-13 Issue:3 Volume:13 Page:4626-4635
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Auzelle Thomas¹^ORCID,Ullrich Florian²³^ORCID,Hietzschold Sebastian²⁴,Sinito Chiara¹^ORCID,Brackmann Stefan²⁴,Kowalsky Wolfgang²⁴⁵,Mankel Eric²³^ORCID,Brandt Oliver¹^ORCID,Lovrincic Robert²⁴^ORCID,Fernández-Garrido Sergio¹⁶^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5−7, 10117 Berlin, Germany

2. InnovationLab, Speyerer Str. 4, 69115 Heidelberg, Germany

3. Materials Science Department, Technische Universität Darmstadt, Otto-Berndt-Strasse 3, 64287 Darmstadt, Germany

4. Institute for High-Frequency Technology, Technische Universität Braunschweig, Schleinitzstrasse 22, 38106 Braunschweig, Germany

5. Kirchhoff Institute for Physics, Heidelberg University, Im Neuenheimer Feld 227, 69120 Heidelberg, Germany

6. Grupo de Electrónica y Semiconductores, Dpto. Física Aplicada, Universidad Autónoma de Madrid, C/Francisco Tomás y Valiente 7, 28049 Madrid, Spain

Funder

Bundesministerium f?r Bildung und Forschung

European Social Fund

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c17519

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