Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

Published:2011-01-10 Issue:2 Volume:98 Page:023506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Deen D. A.,Storm D. F.,Bass R.,Meyer D. J.,Katzer D. S.,Binari S. C.,Lacis J. W.,Gougousi T.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3531551

Reference18 articles.

1. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions

2. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

3. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

4. AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN

5. Ultrathin AlN∕GaN heterostructure field-effect transistors with deposition of Si atoms on AlN barrier surface

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1. Accurate band alignment of sputtered Sc₂O₃ on GaN for high electron mobility transistor applications;Semiconductor Science and Technology;2024-06-12

2. High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs;Journal of Electronic Materials;2024-05-03

3. Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors;Applied Physics Letters;2023-11-13

4. Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach;Microelectronics Journal;2023-08

5. High performance UV photodetectors based on W doped δ -Ta2O5 single crystalline films;Applied Physics Letters;2023-06-19

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