Effects of rapid thermal processing on electron traps in molecular‐beam‐epitaxial GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343091
Reference29 articles.
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3. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
4. Production of the midgap electron trap (EL2) in molecular‐beam‐epitaxial GaAs by rapid thermal processing
5. Variations of electron traps in bulkn‐GaAs by rapid thermal processing
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3. Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing;Journal of Applied Physics;2014-07-07
4. Influence of annealing temperature on electrical characteristics of Ti/Au/GaAsN Schottky diode with 0.2% nitrogen incorporation;Materials Science in Semiconductor Processing;2014-06
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