Evaluation of secondary ion mass spectrometry profile distortions using Rutherford backscattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92640
Reference14 articles.
1. Depth Profiling of n‐Type Dopants in Si and GaAs Using Cs+ Bombardment Negative Secondary Ion Mass Spectrometry in Ultrahigh Vacuum
2. Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in Si
3. Quantitative measurement of impurities in GaAs layers by secondary ion mass spectrometry
4. Low-energy antimony implantation in silicon
5. Ion beam sputtering - the effect of incident ion energy on atomic mixing in subsurface layers
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2. Transient phenomena and impurity relocation in SIMS depth profiling using oxygen bombardment: pursuing the physics to interpret the data;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;1996-11-15
3. Optimization of primary beam conditions for secondary ion mass spectrometry depth profiling of shallow junctions in silicon using a Cameca IMS‐3f;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-05
4. The effect of low glancing angle sputtering on depth resolution in secondary ion mass spectrometry;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06
5. Depth profiling of shallow arsenic implants in silicon using SIMS;Surface and Interface Analysis;1987-09
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