Epitaxial growth and interface band alignment studies of all oxide α-Cr2O3/β-Ga2O3 p-n heterojunction-Reference-Cited by-同舟云学术

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Epitaxial growth and interface band alignment studies of all oxide α-Cr2O3/β-Ga2O3 p-n heterojunction

Published:2019-08-05 Issue:6 Volume:115 Page:061602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ghosh Sahadeb¹²,Baral Madhusmita¹²,Kamparath Rajiv³,Choudhary R. J.⁴,Phase D. M.⁴,Singh S. D.¹²^ORCID,Ganguli Tapas¹²

Affiliation:

1. Synchrotrons Utilization Section, Raja Ramanna Centre for Advanced Technology, Indore-452013, India

2. Homi Bhabha National Institute, Anushakti Nagar, Mumbai-400094, India

3. ALOD, Raja Ramanna Centre for Advanced Technology, Indore-452013, India

4. UGC-DAE CSR, Indore-452001, India

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5100589

Reference47 articles.

1. Polymorphism of Ga2O3 and the System Ga2O3—H2O

2. A review of Ga2O3materials, processing, and devices

3. Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors

4. Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

5. Radiation damage effects in Ga2O3 materials and devices

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2. Investigation of crystalline and band alignment properties of NiO/GaN and Ni_0.5Co_0.5O/GaN heterojunctions using synchrotron radiation based techniques;Physica Scripta;2024-05-13

3. Reliable operation of Cr2O3:Mg/β-Ga2O3 p–n heterojunction diodes at 600 °C;Applied Physics Letters;2024-04-08

4. Electrical properties of vertical Cu2O/β-Ga2O3 (001) p–n diodes;AIP Advances;2023-10-01

5. Mist CVD-based growth of crystalline alpha chromium oxide (α-Cr2O3) on c-plane sapphire substrate with chromium acetylacetonate as a precursor;Chemical Papers;2023-06-16

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