Tight-binding studies of the tendency for boron to cluster in c-Si. II. Interaction of dopants and defects in boron-doped Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368451
Reference16 articles.
1. Tight-binding studies of the tendency for boron to cluster in c-Si. I. Development of an improved boron–boron model
2. High‐concentration boron diffusion in silicon: Simulation of the precipitation phenomena
3. Theory of diffusion-limited precipitation
4. Dopant diffusion in silicon: A consistent view involving nonequilibrium defects
5. Modeling inactive boron during predeposition processes
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