Silicon‐on‐insulator device islands formed by oxygen implantation through patterned masking layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349095
Reference14 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. Silicon on Insulator Formed By O+ OR N+ Ion Implantation
3. Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis
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1. Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation;Journal of Physics D: Applied Physics;2004-06-17
2. The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors;IEEE Transactions on Electron Devices;2002-12
3. Fabrication of [110]-aligned Si quantum wires embedded in SiO2 by low-energy oxygen implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
4. Creation of [110]-aligned Si quantum wires encompassed by SiO2 using low-energy separation-by-implanted-oxygen on a V-groove patterned substrate;Applied Physics Letters;1998-05-18
5. Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology;Electronics Letters;1997
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