Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103631
Reference19 articles.
1. Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenic
2. Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4
3. Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs
4. Non-hydride group V sources for OMVPE
5. Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films;Journal of Electronic Materials;1997-01
2. ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION FOR OPTOELECTRONIC INTEGRATED CIRCUITS;Integrated Optoelectronics;1995
3. On the calculation of electron mobility in In0.53Ga0.47As;Solid-State Electronics;1992-09
4. Organometallic Vapor Phase Epitaxy;Concise Encyclopedia of Semiconducting Materials & Related Technologies;1992
5. OMVPE of Compound Semiconductors;Thin Film Processes;1991
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