Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes
Author:
Affiliation:
1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
Funder
Adaptable and Seamless Technology Transfer Program through Target-Driven R and D
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0040500
Reference24 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
3. InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering
4. Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer
5. GaN-Based Light Emitting Diodes with Tunnel Junctions
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