Direct measurement of internal quantum efficiency in light emitting diodes under electrical injection
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3549730
Reference26 articles.
1. Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
2. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
3. InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode
4. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
5. 30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
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