Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1476705
Reference11 articles.
1. Laser‐induced crystallization phenomena in GeTe‐based alloys. II. Composition dependence of nucleation and growth
2. Rewritable Dual-Layer Phase-Change Optical Disk Utilizing a Blue-Violet Laser
3. Optical properties and structure of tellurium–germanium– bismuth–antimony compounds with fast phase-change capability
4. High Performance Media for Phase Change Optical Recording
5. Phase-Change Optical Disk Having a Nitride Interface Layer
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2. Phase change cellular automata modeling of GeTe, GaSb and SnSe stacked chalcogenide films;Modelling and Simulation in Materials Science and Engineering;2018-04-11
3. Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials;Japanese Journal of Applied Physics;2018-03-19
4. In Situ Temperature-Dependent Transmission Electron Microscopy Studies of Pseudobinary mGeTe·Bi2Te3 (m = 3–8) Nanowires and First-Principles Calculations;Nano Letters;2015-05-05
5. In-situ crystallization of GeTe\GaSb phase change memory stacked films;Journal of Applied Physics;2014-12-21
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