In-situ crystallization of GeTe\GaSb phase change memory stacked films-Reference-Cited by-同舟云学术

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In-situ crystallization of GeTe\GaSb phase change memory stacked films

Published:2014-12-21 Issue:23 Volume:116 Page:234306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Velea A.¹²,Borca C. N.¹,Socol G.³,Galca A. C.²^ORCID,Grolimund D.¹,Popescu M.²,van Bokhoven J. A.¹⁴

Affiliation:

1. Paul Scherrer Institute, CH-5232 Villigen-PSI, Switzerland

2. National Institute of Materials Physics, RO-077125 Magurele, Ilfov, Romania

3. National Institute for Laser, Plasma and Radiation Physics, RO-077125 Magurele, Ilfov, Romania

4. Institute for Chemistry and Bioengineering, ETH Zurich, CH-8093 Zurich, Switzerland

Funder

Scientific Exchange Program NMS-CH - Crus

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904741

Reference62 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Phase-change materials for rewriteable data storage

3. Calorimetric measurements of structural relaxation and glass transition temperatures in sputtered films of amorphous Te alloys used for phase change recording

4. Design Rules for Phase-Change Materials in Data Storage Applications

5. Microscopic origin of the fast crystallization ability of Ge–Sb–Te phase-change memory materials

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1. Low-loss Se-based phase-change materials for infrared photonics;Optical Materials;2024-09

2. Nano-Scanning Calorimetry Applied to Phase Change Processes in GeTe Thin Films;IEEE Transactions on Electron Devices;2023-08

3. Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application;Proceedings of the National Academy of Sciences, India Section A: Physical Sciences;2023-06-20

4. Physical properties’ temperature dynamics of GeTe, Ge2Sb2Te5 and Ge2Sb2Se4Te1 phase change materials;Materials Science in Semiconductor Processing;2022-11

5. Crystallization of GeTe phase change thin films grown by pulsed electron-beam deposition;Materials Science in Semiconductor Processing;2022-09

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