Strong interface scattering induced low thermal conductivity in Bi-based GeTe/Bi2Te3 superlattice-like materials-Reference-Cited by-同舟云学术

Strong interface scattering induced low thermal conductivity in Bi-based GeTe/Bi2Te3 superlattice-like materials

Published:2019 Issue:17 Volume:9 Page:9457-9461
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhou Yang¹²³⁴^ORCID,Huang Kaijin¹²³⁴,Zhou Lingjun¹²³⁴,Cheng Xiaomin¹²³⁴,Xu Ming¹²³⁴^ORCID,Tong Hao¹²³⁴,Miao Xiangshui¹²³⁴^ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics

2. Huazhong University of Science and Technology

3. Wuhan 430074

4. China

Abstract

Strong interface scattering caused by Bi atoms in Bi-based GeTe/Bi₂Te₃ superlattice-like materials leads to the decrease of thermal conductivity.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA01485C

Reference25 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Phase-Change Materials: Vibrational Softening upon Crystallization and Its Impact on Thermal Properties

3. Phase change random access memory cell with superlattice-like structure

4. Low thermal conductivity in Ge2Sb2Te5–SiOx for phase change memory devices

5. S.Kim , B.Lee , M.Asheghi , G. A. M.Hurkx , J.Reifenberg , K.Goodson and H. S. P.Wong , in Thermal disturbance and its impact on reliability of phase-change memory studied by the micro-thermal stage , 2010 , p. 99

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