Thermoelectric and Thermal Properties of a (GeTe) 2 /Sb 2 Te 3 Interfacial Phase‐Change Memory Device
Author:
Affiliation:
1. CD-FMat National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1 Umezono, Tsukuba Central 2 Tsukuba Ibaraki 305-8568 Japan
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000393
Reference46 articles.
1. Phase change memory (PCM) materials and devices
2. Phase change materials and phase change memory
3. Interfacial phase-change memory
4. Resistive switching mechanism of GeTe–Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states
5. GeTe sequences in superlattice phase change memories and their electrical characteristics
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High‐Stability van Der Waals Structures of GeTe/Sb2Te3 Superlattices for 100× Increased Durability Phase‐Change Memory (PCM) by Low‐Temperature Atomic Layer Deposition;Advanced Functional Materials;2024-07-30
2. Enhanced Thermoelectric Performance of GeTe-Based Composites Incorporated with Fe Nanoparticles;ACS Applied Materials & Interfaces;2022-08-18
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